IPD30N10S3L34ATMA1 vs IPD33CN10NGATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveInfineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.32 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T2 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 30 A | β |
| Pulsed Drain Current (IDM) | 180 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 57 W | β |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΞ© @ VGS=10 V | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | β |
| Total Gate Charge (Qg typ) | 23 nC | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3 (DPAK), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (JEDEC J-STD-020, 260Β°C peak reflow) | 1 |
| RoHS / REACH | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | 100% Avalanche tested | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 27 A |
| Power Dissipation (PD, Tc) | β | 58 W |
| Technology | β | OptiMOS (Trench) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Operating Temperature Range | β | -55C to +175C (TJ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |