IPD30N10S3L34ATMA1 vs IPD60R280P7SAUMA1 Comparison

Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD60R280P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD30N10S3L34ATMA1 IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA1 βœ“ Active
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD30N10S3L34ATMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.48
Manufacturer Infineon Technologies β€”
Product Family OptiMOS-T2 β€”
Transistor Type N-Channel Enhancement Mode MOSFET β€”
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID, Tc=25Β°C) 30 A β€”
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc=25Β°C) 57 W β€”
Drain-Source On-Resistance (RDS(on) max) 31 mΞ© @ VGS=10 V β€”
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) β€”
Total Gate Charge (Qg typ) 23 nC β€”
Operating Junction Temperature -55Β°C to +175Β°C β€”
Package PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified β€”
MSL Level 1 (JEDEC J-STD-020, 260Β°C peak reflow) 1
RoHS / REACH Compliant β€”
Lead-Free / Halogen-Free Yes / Yes β€”
Avalanche Rated 100% Avalanche tested β€”
Continuous Drain Current (ID, Tc) β€” 12 A
Static Drain-Source On-Resistance (RDS(on)) β€” 280 mΞ© (typical)
Gate-Source Voltage (VGS) Max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 4 V max @ ID = 190 Β΅A
Total Power Dissipation (Ptot, Tc) β€” 53 W
Operating Junction Temperature (TJ) β€” -40 Β°C to +150 Β°C
Technology β€” CoolMOS P7 Superjunction (SJ) N-channel
Series β€” CoolMOS P7 (7th generation, 600 V)
RoHS Status β€” Compliant
Integrated ESD Protection β€” Yes

Datasheets & Resources

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