IPD30N10S3L34ATMA2 vs IPD70N10S312ATMA2 Comparison

Detailed side-by-side comparison of IPD30N10S3L34ATMA2 by Infineon and IPD70N10S312ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 βœ“ Active

Specification Comparison

Parameter IPD30N10S3L34ATMA2 IPD70N10S312ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.69
FET Type N-Channel β€”
Drain-Source Voltage (V_DS) 100 V β€”
Continuous Drain Current (I_D, Tc) 30 A β€”
Pulsed Drain Current (I_DM) 180 A β€”
Power Dissipation (P_D, Tc) 57 W β€”
R_DS(on) max at V_GS=10V 31 mOhm (typ) β€”
Gate Threshold Voltage V_GS(th) max 2.4 V β€”
Total Gate Charge (Qg) max 31 nC β€”
Operating Junction Temperature -55 C to +175 C β€”
Package / Supplier Device Package PG-TO252-3-11 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) β€”
Technology OptiMOS-T (trench) OptiMOS-T Power-MOSFET (N-Channel)
Automotive Qualification AEC-Q101 β€”
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited floor life)
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Number β€” IPD70N10S312ATMA2
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 70 A
Power Dissipation (Ptot, Tc=25C) β€” 125 W
On-State Resistance RDS(on) β€” [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Operating Temperature Range β€” -55C to +175C
Package β€” PG-TO252-3-11 (DPAK)
Pin Count β€” 3 (Gate, Drain, Source)
Channel Type β€” N-Channel Enhancement Mode
Avalanche Rated β€” Yes

Datasheets & Resources

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