IPD30N10S3L34ATMA2 vs IPD90N06S407ATMA2 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA2 by Infineon and IPD90N06S407ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD30N10S3L34ATMA2 | IPD90N06S407ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.84 |
| FET Type | N-Channel | N-Channel Enhancement Mode |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| Pulsed Drain Current (I_DM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D, Tc) | 57 W | β |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | β |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | β |
| Total Gate Charge (Qg) max | 31 nC | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | β |
| Technology | OptiMOS-T (trench) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Qualified |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | β |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D at T_C) | β | 90 A |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | β | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | β | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | β | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | β | 79 W |
| Storage Temperature | β | [DATA_NEEDED: storage temperature range] |
| Package | β | PG-TO252-3-11 (DPAK) |
| Lead-Free / RoHS | β | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | β | MSL1 (up to 260 C peak reflow) |
| Avalanche Rating | β | 100% Avalanche Tested |