IPD33CN10NGATMA1 vs IPD70N10S312ATMA2 Comparison
Detailed side-by-side comparison of IPD33CN10NGATMA1 by Infineon and IPD70N10S312ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveInfineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 β ActiveSpecification Comparison
| Parameter | IPD33CN10NGATMA1 | IPD70N10S312ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.69 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 27 A | 70 A |
| Power Dissipation (PD, Tc) | 58 W | β |
| Technology | OptiMOS (Trench) | OptiMOS-T Power-MOSFET (N-Channel) |
| Package | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3-11 (DPAK) |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | 1 (unlimited floor life) |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPD70N10S312ATMA2 |
| Power Dissipation (Ptot, Tc=25C) | β | 125 W |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Channel Type | β | N-Channel Enhancement Mode |
| Avalanche Rated | β | Yes |