IPD33CN10NGATMA1 vs IPG20N06S4L14AATMA1 Comparison

Detailed side-by-side comparison of IPD33CN10NGATMA1 by Infineon and IPG20N06S4L14AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S4L14AATMA1

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΞ© MOSFET | Infineon

IPG20N06S4L14AATMA1 βœ“ Active

Specification Comparison

Parameter IPD33CN10NGATMA1 IPG20N06S4L14AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.82
FET Type N-Channel 2 N-Channel (Dual)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc) 27 A β€”
Power Dissipation (PD, Tc) 58 W β€”
Technology OptiMOS (Trench) OptiMOSβ„’ Trench
Package PG-TO252-3 (DPAK), Surface Mount PG-TDSON-8-10 (Wettable Flank)
Pin Count 3 (Gate, Drain, Source) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (TJ) -55Β°C to +175Β°C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level 1 β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPG20N06S4L14AATMA1
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) β€” 20 A (per channel)
Power Dissipation (PD) β€” 50 W
RDS(on) at VGS=10V β€” 13.7 mΞ© typical
RDS(on) at VGS=4.5V β€” 14 mΞ© typical
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive β€” Yes
Automotive Qualification β€” AEC-Q101
Peak Reflow Temperature β€” 260Β°C
Avalanche Tested β€” 100% (per datasheet)
RoHS Compliance β€” Green Product (RoHS compliant)
AOI Compatible β€” Yes (Wettable Flank)

Datasheets & Resources

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