IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA2 Comparison

Detailed side-by-side comparison of IPD35N10S3L26ATMA2 by Infineon and IPD70N10S312ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 βœ“ Active

Specification Comparison

Parameter IPD35N10S3L26ATMA2 IPD70N10S312ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.69
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A 70 A
On-Resistance R<sub>DS(on)</sub> max 24 mOhm β€”
Power Dissipation (Ptot, Tc) 71 W β€”
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] β€”
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55C to +175C
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Pin Count 3 (Drain, Source, Gate + tab) 3 (Gate, Drain, Source)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
Technology Trench MOSFET (OptiMOS-T) OptiMOS-T Power-MOSFET (N-Channel)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited floor life)
Part Number β€” IPD70N10S312ATMA2
Power Dissipation (Ptot, Tc=25C) β€” 125 W
On-State Resistance RDS(on) β€” [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Channel Type β€” N-Channel Enhancement Mode
Avalanche Rated β€” Yes

Datasheets & Resources

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