IPD380P06NMATMA1 vs BSZ065N06LS5ATMA1 Comparison

Detailed side-by-side comparison of IPD380P06NMATMA1 by Infineon and BSZ065N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 βœ“ Active
Infineon
BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 βœ“ Active

Specification Comparison

Parameter IPD380P06NMATMA1 BSZ065N06LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.62
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage V(BR)DSS 60 V β€”
Continuous Drain Current (Tc=25 C) 35 A β€”
Power Dissipation (Tc) 125 W β€”
Technology OptiMOS P-channel trench OptiMOSβ„’ 5 logic-level
Package PG-TO252-3 (DPAK), surface mount PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +150Β°C
Gate Drive Logic-level compatible β€”
Avalanche Rated Yes (per manufacturer datasheet) β€”
RoHS Status Compliant Compliant
MSL Level 1 β€”
Target Applications Reverse-polarity protection, load switch, BMS, high-side switch β€”
Lead-Free Yes β€”
Automotive Qualified Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOSβ„’ 5
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) Max β€” 60 V
Continuous Drain Current (ID) Max β€” 65 A
Drain Current @ Tc (ID, Tc=25Β°C) β€” 40 A
On-Resistance RDS(on) Max @ VGS=10V β€” 6.5 mΞ©
Power Dissipation (PD) Max β€” 46 W
Gate Threshold Voltage (VGS(th)) β€” 2.3 V
Total Gate Charge (Qg) β€” 13 nC @ VGS=4.5 V
Input Capacitance (Ciss) β€” 1.8 nF

Datasheets & Resources

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