IPD380P06NMATMA1 vs BSZ180P03NS3EGATMA1 Comparison
Detailed side-by-side comparison of IPD380P06NMATMA1 by Infineon and BSZ180P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 β ActiveSpecification Comparison
| Parameter | IPD380P06NMATMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.45 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage V(BR)DSS | 60 V | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| Power Dissipation (Tc) | 125 W | 40 W |
| Technology | OptiMOS P-channel trench | OptiMOS P3 |
| Package | PG-TO252-3 (DPAK), surface mount | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55Β°C to +150Β°C (TJ) |
| Gate Drive | Logic-level compatible | β |
| Avalanche Rated | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | β |
| Lead-Free | Yes | Yes |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | β |
| Transistor Type | β | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) - Ta | β | 9 A |
| Continuous Drain Current (ID) - Tc | β | 39.5 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | β | 18 mΞ© @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | β | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | β | 2.1 W |