IPD380P06NMATMA1 vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IPD380P06NMATMA1 by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD380P06NMATMA1 | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.32 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage V(BR)DSS | 60 V | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| Power Dissipation (Tc) | 125 W | β |
| Technology | OptiMOS P-channel trench | HEXFET (IR MOSFET) |
| Package | PG-TO252-3 (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +175 C |
| Gate Drive | Logic-level compatible | β |
| Avalanche Rated | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| MSL Level | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | β |
| Lead-Free | Yes | β |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| Continuous Drain Current (ID) at TC=25C | β | 31 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | β | 110 W |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Lead-Free Finish | β | Yes (PBF suffix) |