IPD50N03S4L06ATMA1 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPD50N03S4L06ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N03S4L06ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.69 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (V_DS) | 30 V | β |
| Continuous Drain Current (I_D, Tc) | 50 A | β |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | β |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | β |
| Input Capacitance (C_iss) | 2.33 nF | β |
| Output Capacitance (C_oss) | 600 pF | β |
| Reverse Transfer Capacitance (C_rss) | 34 pF | β |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 C peak reflow) | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Status | Compliant (Green Package) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T2 |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Avalanche Tested | β | 100 % Avalanche tested |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |