IPD50N04S408ATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N04S408ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| Polarity | N-Channel | N-Channel |
| Mode | Enhancement-mode | β |
| Drain-Source Voltage (V DS) | 40 V | β |
| Continuous Drain Current (I D, Tc) | 50 A | β |
| Power Dissipation (P D, Tc) | 46 W | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +150 C |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % Avalanche tested | β |
| Green Package (RoHS) | RoHS compliant | β |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | β |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | β |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | β |
| Technology | β | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| RoHS Status | β | Compliant |
| Avalanche Rated | β | Yes |