IPD50N04S408ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N04S408ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T2 | β |
| Polarity | N-Channel | β |
| Mode | Enhancement-mode | β |
| Drain-Source Voltage (V DS) | 40 V | β |
| Continuous Drain Current (I D, Tc) | 50 A | β |
| Power Dissipation (P D, Tc) | 46 W | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % Avalanche tested | β |
| Green Package (RoHS) | RoHS compliant | β |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | β |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | β |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| RoHS Status | β | Compliant |