IPD50N04S408ATMA1 vs IPB35N10S3L26ATMA2 Comparison
Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and IPB35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N04S408ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS Power-Transistor |
| Polarity | N-Channel | β |
| Mode | Enhancement-mode | β |
| Drain-Source Voltage (V DS) | 40 V | β |
| Continuous Drain Current (I D, Tc) | 50 A | β |
| Power Dissipation (P D, Tc) | 46 W | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +175C |
| MSL Level | MSL1 (260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % Avalanche tested | β |
| Green Package (RoHS) | RoHS compliant | β |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | β |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | β |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 100 V |
| Continuous Drain Current (Id) at Tc | β | 35 A |
| Pulsed Drain Current | β | 180 A |
| Power Dissipation (Pd) at Tc | β | 71 W |
| RDS(on) (typical) | β | 26.3 mOhm |
| Number of Pins | β | 3 |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical value] |
| RoHS Status | β | Compliant |
| Automotive Qualified | β | Yes (per Infineon product page classification) |