IPD50N04S408ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50N04S408ATMA1 IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N04S408ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $0.49
Manufacturer Infineon Technologies β€”
Product Family OptiMOS-T2 β€”
Polarity N-Channel β€”
Mode Enhancement-mode β€”
Drain-Source Voltage (V DS) 40 V β€”
Continuous Drain Current (I D, Tc) 50 A β€”
Power Dissipation (P D, Tc) 46 W β€”
Package PG-TO252-3-313 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C β€”
MSL Level MSL1 (260 Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100 % Avalanche tested β€”
Green Package (RoHS) RoHS compliant β€”
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] β€”
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] β€”
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] β€”
Technology β€” N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
RoHS Status β€” Compliant
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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