IPD50N06S409ATMA2 vs IPD028N06NF2SATMA1 Comparison
Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD028N06NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveInfineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΞ© OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N06S409ATMA2 | IPD028N06NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.62 |
| Technology | N-Channel MOSFET (OptiMOS) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 50 A | β |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Pin Count | 3 (2 + Tab) | 3 (Gate, Drain-tab, Source) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPD028N06NF2SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Technology Family | β | OptiMOS 5 60V |
| Drain-Source Voltage (VDS) max | β | 60 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 139 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 2.85 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation at TA=25Β°C | β | 3 W |
| Power Dissipation at TC=25Β°C | β | 150 W |
| Operating Junction Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Packing | β | Tape & Reel (T&R) |