IPD50N06S409ATMA2 vs IPD052N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD052N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΞ© 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΞ© 118A | Infineon

IPD052N10NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 IPD052N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.55
Technology N-Channel MOSFET (OptiMOS) MOSFET (Metal Oxide), OptiMOS 5 100V
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at Tc 50 A 118 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK) β€”
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPD052N10NF2SATMA1
FET Type β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 17 A
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 150 W
Drain-Source On-Resistance (RDS(on)) Max β€” 5.2 mΞ© @ VGS=10V, ID=70A
Gate-Source Threshold Voltage (VGS(th)) Max β€” 3.8 V @ ID=84Β΅A
Package / Case β€” PG-TO252-3 (DPAK, SC-63)
Supplier Device Package β€” PG-TO252-3
Operating Temperature β€” -55 Β°C to +175 Β°C (TJ)
Number of Channels β€” 1

Datasheets & Resources

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