IPD50N06S409ATMA2 vs IPD22N08S2L50ATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD22N08S2L50ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD22N08S2L50ATMA1 IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon

IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon

IPD22N08S2L50ATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 IPD22N08S2L50ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.39
Technology N-Channel MOSFET (OptiMOS) β€”
Drain-Source Voltage (VDS) 60 V 75 V
Continuous Drain Current (ID) at Tc 50 A β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] Logic-Level (typ. 1.7-2.5 V)
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 Qualified
RoHS Status Compliant β€”
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS
Transistor Type β€” N-Channel MOSFET (Enhancement Mode)
Continuous Drain Current (ID, Tc) β€” 27 A
Maximum Power Dissipation (Ptot) β€” 75 W
On-Resistance RDS(on) max @ VGS=10V β€” 23 mOhm (typical)
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max at VGS=10V and VGS=4.5V]
Avalanche Energy Rating β€” 100% Avalanche Tested
MSL Level β€” MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow)
Lead-Free / RoHS β€” Yes (Green Package)

Datasheets & Resources

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