IPD50P04P413ATMA2 vs IPD50P04P4L11ATMA2 Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPD50P04P4L11ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50P04P413ATMA2 | IPD50P04P4L11ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.82 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | — |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | — |
| Transistor Type | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Pin Count | — | 3 (Drain / Tab / Source / Gate) |
| RoHS Compliance | — | Compliant |