IPD50P04P413ATMA2 vs IPD90N06S407ATMA2 Comparison

Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPD90N06S407ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 βœ“ Active
Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 βœ“ Active

Specification Comparison

Parameter IPD50P04P413ATMA2 IPD90N06S407ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.84
Polarity / Device Type P-Channel MOSFET β€”
Technology OptiMOS-P2 (Trench) β€”
Drain-Source Voltage (VDS) -40 V β€”
Continuous Drain Current (TC=25Β°C, ID) 50 A β€”
Continuous Drain Current (TC=100Β°C, ID) [DATA_NEEDED: ID @ 100Β°C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
Power Dissipation (TC=25Β°C, Ptot) 58 W β€”
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΞ© (typ) / 12.6 mΞ© (max) β€”
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Maximum Junction Temperature (TJ,max) 175 Β°C β€”
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-313 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs β€”
MSL Level 1 β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101 Qualified
RoHS Status Compliant β€”
FET Type β€” N-Channel Enhancement Mode
Drain-to-Source Voltage (V_DS) β€” 60 V
Continuous Drain Current (I_D at T_C) β€” 90 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A β€” 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) β€” 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V β€” 56 nC
Maximum Power Dissipation (P_D at T_C) β€” 79 W
Operating Junction Temperature β€” -55 C to +175 C
Storage Temperature β€” [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS β€” Yes (Green Product)
MSL (Moisture Sensitivity Level) β€” MSL1 (up to 260 C peak reflow)
Avalanche Rating β€” 100% Avalanche Tested

Datasheets & Resources

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