IPD50P04P413ATMA2 vs IRF4905STRRPBF Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IRF4905STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50P04P413ATMA2 | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.94 |
| Polarity / Device Type | P-Channel MOSFET | β |
| Technology | OptiMOS-P2 (Trench) | HEXFET (Advanced Process) |
| Drain-Source Voltage (VDS) | -40 V | -55 V |
| Continuous Drain Current (TC=25Β°C, ID) | 50 A | β |
| Continuous Drain Current (TC=100Β°C, ID) | [DATA_NEEDED: ID @ 100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (TC=25Β°C, Ptot) | 58 W | β |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΞ© (typ) / 12.6 mΞ© (max) | β |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | -2.0 V to -4.0 V |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| Maximum Junction Temperature (TJ,max) | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-313 (DPAK) | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | β |
| MSL Level | 1 | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | P-Channel |
| Continuous Drain Current (ID) at TC=25C | β | -74 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | β | 20 mOhm |
| RDS(on) max at VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Total Gate Charge (Qg) | β | 120 nC |
| Power Dissipation (PD) at TC=25C | β | 170 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free | β | Yes |