IPD50R380CEAUMA1 vs IPB60R165CPATMA1 Comparison
Detailed side-by-side comparison of IPD50R380CEAUMA1 by Infineon and IPB60R165CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΞ© N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 β ActiveInfineon
IPB60R165CPATMA1 - 600V 165mΞ© CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 β ActiveSpecification Comparison
| Parameter | IPD50R380CEAUMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $1.78 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | β |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | β |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | β |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Technology | CoolMOS CE (super-junction) | CoolMOS CP (superjunction, N-Channel) |
| Channel Type | N-Channel | β |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Pb-free lead plating) |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | β |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | β |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 21 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | β | 165 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 3.5 V |
| Total Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | β | -55Β°C to +150Β°C |
| JEDEC Qualification | β | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | β | Extreme dv/dt rated |
| Polarity / Channel | β | N-Channel |