IPD50R380CEAUMA1 vs IPD60R380C6ATMA1 Comparison
Detailed side-by-side comparison of IPD50R380CEAUMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΞ© N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 β Active
Specification Comparison
| Parameter | IPD50R380CEAUMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.41 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | β |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | β |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | β |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Technology | CoolMOS CE (super-junction) | CoolMOS C6 Superjunction |
| Channel Type | N-Channel | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | β |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | β |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) at TC=25C | β | 10.6 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | β | 380 mOhm |
| Power Dissipation (PD) at TC=25C | β | 83 W |
| Operating Junction Temperature (TJ) | β | -55C to +150C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| FET Type | β | N-Channel |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | β | Exposed pad (electrically connected to drain) |