IPD60R145CFD7ATMA1 vs IPB60R165CPATMA1 Comparison

Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPB60R165CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R145CFD7ATMA1 IPB60R165CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.78
FET Type N-Channel β€”
Technology CoolMOS CFD7 (superjunction) CoolMOS CP (superjunction, N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V β€”
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) β€”
On-Resistance R<sub>DS(on)</sub> max 145 mOhm β€”
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) β€”
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] β€”
Package TO-252AA (DPAK) surface mount PG-TO263-3-2 (D2PAK-2)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) β€”
Operating Temperature -55C to +150C (junction) β€”
Mounting Type Surface Mount (DPAK, 3-pin + tab) Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Series CoolMOS CFD7 β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant (Pb-free lead plating)
Target Application ZVS / LLC resonant converters, soft switching β€”
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 21 A
Power Dissipation (PD, Tc=25Β°C) β€” 192 W
On-Resistance RDS(on), max (VGS=10V) β€” 165 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th), typ) β€” 3.5 V
Total Gate Charge (Qg, typ) β€” [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) β€” -55Β°C to +150Β°C
JEDEC Qualification β€” Qualified per JEDEC for target applications
dv/dt Ruggedness β€” Extreme dv/dt rated
Polarity / Channel β€” N-Channel

Datasheets & Resources

Browse All Products Create BOM Request Quote