IPD60R145CFD7ATMA1 vs IPD60R380C6ATMA1 Comparison
Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 β Active
Specification Comparison
| Parameter | IPD60R145CFD7ATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | β |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | β |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | β |
| Package | TO-252AA (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | β |
| Operating Temperature | -55C to +150C (junction) | β |
| Mounting Type | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Series | CoolMOS CFD7 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | β |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) at TC=25C | β | 10.6 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | β | 380 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | β | 83 W |
| Operating Junction Temperature (TJ) | β | -55C to +150C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | β | Exposed pad (electrically connected to drain) |