IPD60R145CFD7ATMA1 vs IPD60R385CPATMA1 Comparison

Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPD60R385CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R145CFD7ATMA1 IPD60R385CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.42
FET Type N-Channel N-Channel
Technology CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) 600 V
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max 145 mOhm
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max]
Package TO-252AA (DPAK) surface mount
Body Diode Integrated fast body diode (low Q<sub>rr</sub>)
Operating Temperature -55C to +150C (junction)
Mounting Type Surface Mount (DPAK, 3-pin + tab) Surface Mount
Pin Count 3 (Gate, Drain, Source) 3 (Gate, Drain, Source; tab = Drain)
Series CoolMOS CFD7 CoolMOS™ CP (5th generation)
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching
Manufacturer Infineon Technologies
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C
Package / Case PG-TO252-3 (DPAK)

Datasheets & Resources

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