IPD60R360P7ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD60R360P7ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R360P7ATMA1 - 600V CoolMOS P7 MOSFET, 360mOhm, 9A | Infineon
IPD60R360P7ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPD60R360P7ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | OptiMOS 3 |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (V_DS) | 600 V | β |
| Gate-Source Voltage (V_GS) | Β±20 V (max) | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 9 A | β |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | β |
| R_DS(on) max @ V_GS=10V | 360 mΞ© | β |
| Total Power Dissipation (P_tot) at T_C=25Β°C | 41 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55 C to +175 C |
| Storage Temperature | -55Β°C to +150Β°C | β |
| Package / Case | PG-TO252-3 (DPAK), surface mount | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) | β |
| ESD Protection (HBM) | >2 kV (per datasheet) | β |
| MSL Level | 1 (per JEDEC J-STD20) | β |
| RoHS Compliance | Compliant | β |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) | β |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |