IPD60R360P7ATMA1 vs IPW60R037P7XKSA1 Comparison

Detailed side-by-side comparison of IPD60R360P7ATMA1 by Infineon and IPW60R037P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Active

Specification Comparison

Parameter IPD60R360P7ATMA1 IPW60R037P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $3.55
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS™ P7
Technology Superjunction (SJ) N-channel MOSFET CoolMOS Superjunction (SJ)
Drain-Source Voltage (V_DS) 600 V
Gate-Source Voltage (V_GS) ±20 V (max)
Continuous Drain Current (I_D) at T_C=25°C 9 A
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current]
R_DS(on) max @ V_GS=10V 360 mΩ
Total Power Dissipation (P_tot) at T_C=25°C 41 W
Operating Junction Temperature -55°C to +150°C -55 °C to +150 °C
Storage Temperature -55°C to +150°C
Package / Case PG-TO252-3 (DPAK), surface mount
Mounting Type Surface Mount Through Hole
Gate Threshold Voltage (V_GS(th)) typ 3.5 V (typ)
ESD Protection (HBM) >2 kV (per datasheet)
MSL Level 1 (per JEDEC J-STD20)
RoHS Compliance Compliant
Qualification Industrial grade per JEDEC (J-STD20, JESD22)
Transistor Type N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) 600 V
Continuous Drain Current (I_D, Tc=25 °C) 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ
Power Dissipation (P_D, Tc=25 °C) 255 W
Gate Threshold Voltage (V_GS(th), typ) 3.5 V
Package PG-TO247-3 (TO-247-3, through-hole)
Orderable Part Number Suffix XKSA1 (tube packaging, industrial)
RoHS Status Compliant
Avalanche Rated Yes

Datasheets & Resources

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