IPD60R360P7SAUMA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPD60R360P7SAUMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R360P7SAUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) at TC | 9 A | β |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | β |
| Power Dissipation (PD) at TC | 41 W | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C (T_j max) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Channel Type | N-Channel | β |
| Product Family | β | CoolMOS P7 (600 V) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, T_C=25Β°C) | β | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | β | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | β | 3.5 V |
| Power Dissipation P_D (T_C=25Β°C) | β | 53 W |
| Package | β | PG-TO263-3 (D2PAK) |
| Pin Count | β | 3 (2 + Tab) |
| Configuration | β | Single N-Channel |
| Lead-Free | β | Yes |
| Generation | β | 7th Gen CoolMOS (successor to P6) |