IPD60R380C6ATMA1 vs BSC027N06LS5ATMA1 Comparison

Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and BSC027N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 βœ“ Active
Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 βœ“ Active

Specification Comparison

Parameter IPD60R380C6ATMA1 BSC027N06LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.66
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID) at TC=25C 10.6 A β€”
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] Logic-level
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD) at TC=25C 83 W β€”
Operating Junction Temperature (TJ) -55C to +150C β€”
Storage Temperature [DATA_NEEDED: storage temperature] β€”
Technology CoolMOS C6 Superjunction MOSFET (Metal Oxide)
FET Type N-Channel N-Channel
Package PG-TO252-3 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOSβ„’ 5
Part Status β€” Active
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID) at Tc=25Β°C β€” 100 A
Continuous Drain Current (ID) at Tc=100Β°C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V β€” 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25Β°C β€” 83 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Package / Case β€” PG-TDSON-8-7 (SuperSO8 5x6)
Pin Count β€” 8
Gate Charge (Qg) β€” [DATA_NEEDED: total Qg]
Avalanche Energy Rated β€” Yes
MSL (Moisture Sensitivity Level) β€” MSL1

Datasheets & Resources

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