IPD60R380C6ATMA1 vs BSC050N03LSGATMA1 Comparison
Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD60R380C6ATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.36 |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TC=25C | 83 W | β |
| Operating Junction Temperature (TJ) | -55C to +150C | β |
| Storage Temperature | [DATA_NEEDED: storage temperature] | β |
| Technology | CoolMOS C6 Superjunction | OptiMOS 3 (N-channel trench MOSFET) |
| FET Type | N-Channel | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 80 A |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | β | 5 mOhm |
| Power Dissipation (PD) at Tc | β | 50 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Channel Type | β | N-Channel |