IPD60R380C6ATMA1 vs IPD60R385CPATMA1 Comparison

Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and IPD60R385CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R380C6ATMA1 IPD60R385CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.42
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) at TC=25C 10.6 A
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C 83 W
Operating Junction Temperature (TJ) -55C to +150C
Storage Temperature [DATA_NEEDED: storage temperature]
Technology CoolMOS C6 Superjunction
FET Type N-Channel N-Channel
Package PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain)
Manufacturer Infineon Technologies
Series CoolMOS™ CP (5th generation)
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C
Package / Case PG-TO252-3 (DPAK)
Pin Count 3 (Gate, Drain, Source; tab = Drain)

Datasheets & Resources

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