IPD60R385CPATMA1 vs IPD50R380CEAUMA1 Comparison

Detailed side-by-side comparison of IPD60R385CPATMA1 by Infineon and IPD50R380CEAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R385CPATMA1 IPD50R380CEAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.34
Manufacturer Infineon Technologies
Series CoolMOS™ CP (5th generation)
FET Type N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V 500 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typ/min/max]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C -55C to +150C
Package / Case PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source; tab = Drain)
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020)
Continuous Drain Current (Id) at Tc=25C 14.1 A
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ
Gate-Source Voltage (VGS) max ±20 V
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ]
Total Power Dissipation (Ptot) at Tc=25C 98 W
Technology CoolMOS CE (super-junction)
Channel Type N-Channel
Package PG-TO252-3 (DPAK)
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level]

Datasheets & Resources

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