IPD60R385CPATMA1 vs IPD60R145CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPD60R385CPATMA1 by Infineon and IPD60R145CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R385CPATMA1 IPD60R145CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $1.05
Manufacturer Infineon Technologies
Series CoolMOS™ CP (5th generation) CoolMOS CFD7
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C
Package / Case PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount (DPAK, 3-pin + tab)
Pin Count 3 (Gate, Drain, Source; tab = Drain) 3 (Gate, Drain, Source)
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Technology CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) 600 V
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max 145 mOhm
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max]
Package TO-252AA (DPAK) surface mount
Body Diode Integrated fast body diode (low Q<sub>rr</sub>)
Operating Temperature -55C to +150C (junction)
Target Application ZVS / LLC resonant converters, soft switching

Datasheets & Resources

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