IPD60R600PFD7SAUMA1 vs IPD60R1K0PFD7SAUMA1 Comparison

Detailed side-by-side comparison of IPD60R600PFD7SAUMA1 by Infineon and IPD60R1K0PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD60R600PFD7SAUMA1 IPD60R1K0PFD7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.36
Manufacturer Infineon Technologies β€”
Series CoolMOS PFD7 CoolMOS PFD7 consumer / superjunction
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOS) CoolMOS PFD7 Superjunction (SJ) MOSFET
Drain-Source Voltage (V_DS) 600 V β€”
Continuous Drain Current (I_D) 6 A (Tc) β€”
R_DS(on) Max 600 mΞ© @ V_GS = 10 V, I_D = 1.7 A β€”
Total Gate Charge (Q_g) 8.5 nC β€”
Output Capacitance (C_oss) 8 pF @ 400 V β€”
Power Dissipation (P_D) 31 W (Tc) β€”
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) β€”
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, 2 leads + tab, SC-63)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55Β°C to +150Β°C (Tj) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Reel Quantity 2500 β€”
Polarity / Channel Type β€” N-Channel Enhancement Mode
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID) at TC β€” 4.7 A
Power Dissipation (PD) at TC β€” 26 W
Drain-Source On-Resistance (RDS(on)) β€” 1 Ξ© @ VGS=10V
Gate Threshold Voltage (VGS(th)) β€” Β±20 V (max gate-source)
Gate Charge (QG) β€” 6 nC @ VGS=10V
Output Capacitance (Coss) β€” 230 pF @ 400 V
Operating Temperature Range β€” -55C to +150C (TJ)
Gate Drive Voltage (recommended) β€” 10 V (full enhancement)

Datasheets & Resources

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