IPD65R225C7ATMA1 vs IPL65R230C7AUMA1 Comparison

Detailed side-by-side comparison of IPD65R225C7ATMA1 by Infineon and IPL65R230C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R230C7AUMA1

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 βœ“ Active

Specification Comparison

Parameter IPD65R225C7ATMA1 IPL65R230C7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.34 $1.02
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology Super-junction (SJ) / CoolMOS Superjunction (CoolMOS C7)
Drain-Source Voltage (VDSS) 650 V β€”
Continuous Drain Current (ID) at TC 11 A β€”
Power Dissipation (PD) at TC 63 W β€”
On-Resistance RDS(on) max 225 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V (max) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: VGS(th) typical/min/max]
Operating Temperature Range -55Β°C to +150Β°C β€”
Package PG-TO252-3 (DPAK) PG-VSON-4 (surface mount, 4 pins)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + tab) β€”
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) β€”
Drain-Source Voltage (VDS) β€” 650 V
Continuous Drain Current (ID) at Tc β€” 10 A
Power Dissipation (PD) at Tc β€” 67 W
Drain-Source On-Resistance (RDS(on)) max β€” 230 mOhm
Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical at VGS=10V]
Operating Junction Temperature β€” -55 C to +150 C
ESD Protection β€” Yes (integrated, per datasheet)
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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