IPD65R380E6ATMA1 vs IPB014N06NATMA1 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPB014N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD65R380E6ATMA1 IPB014N06NATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $2.10
Manufacturer Infineon Technologies β€”
Series CoolMOSβ„’ E6 β€”
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOSβ„’) OptiMOS 5 (trench-gate)
Drain-Source Voltage (V_DS) 650 V β€”
Continuous Drain Current (I_D) at T_C 10.6 A β€”
R_DS(on) max at V_GS=10V 380 mΞ© β€”
R_DS(on) test conditions 3.2 A, 10 V β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Gate Threshold Voltage (V_GS(th)) 3.5 V typ β€”
Gate Charge (Q_G) 39 nC at 10 V β€”
Input Capacitance (C_iss) 710 pF at 100 V β€”
Power Dissipation (P_D) at T_C 83 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C β€”
Package PG-TO252-3 (DPAK), surface mount PG-TO263-7 (D2PAK-7)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
MSL Level 1 β€”
Transistor Polarity β€” N-Channel
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Ta β€” 34 A
Continuous Drain Current (ID) at Tc β€” 180 A
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 214 W
On-Resistance RDS(on) max β€” 1.4 mΞ© at VGS=10V
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Avalanche Rating β€” 100% avalanche tested
Qualification β€” JEDEC qualified for target applications
Primary Application β€” Synchronous rectification, motor control

Datasheets & Resources

Browse All Products Create BOM Request Quote