IPD65R380E6ATMA1 vs IPD052N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD052N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 ✓ Active

Specification Comparison

Parameter IPD65R380E6ATMA1 IPD052N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.55
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6
Transistor Type N-Channel MOSFET
Technology Superjunction (CoolMOS™) MOSFET (Metal Oxide), OptiMOS 5 100V
Drain-Source Voltage (V_DS) 650 V
Continuous Drain Current (I_D) at T_C 10.6 A
R_DS(on) max at V_GS=10V 380 mΩ
R_DS(on) test conditions 3.2 A, 10 V
Gate-Source Voltage (V_GS) max ±20 V
Gate Threshold Voltage (V_GS(th)) 3.5 V typ
Gate Charge (Q_G) 39 nC at 10 V
Input Capacitance (C_iss) 710 pF at 100 V
Power Dissipation (P_D) at T_C 83 W
Operating Temperature Range -55 °C to +150 °C
Package PG-TO252-3 (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1
Part Number IPD052N10NF2SATMA1
FET Type N-Channel
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at Ta 17 A
Continuous Drain Current (ID) at Tc 118 A
Power Dissipation (PD) at Ta 3 W
Power Dissipation (PD) at Tc 150 W
Drain-Source On-Resistance (RDS(on)) Max 5.2 mΩ @ VGS=10V, ID=70A
Gate-Source Threshold Voltage (VGS(th)) Max 3.8 V @ ID=84µA
Package / Case PG-TO252-3 (DPAK, SC-63)
Supplier Device Package PG-TO252-3
Operating Temperature -55 °C to +175 °C (TJ)
Number of Channels 1

Datasheets & Resources

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