IPD65R380E6ATMA1 vs IPD50N10S3L16ATMA2 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD50N10S3L16ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD65R380E6ATMA1 IPD50N10S3L16ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.96
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 OptiMOS-T
Transistor Type N-Channel MOSFET
Technology Superjunction (CoolMOS™)
Drain-Source Voltage (V_DS) 650 V
Continuous Drain Current (I_D) at T_C 10.6 A
R_DS(on) max at V_GS=10V 380 mΩ
R_DS(on) test conditions 3.2 A, 10 V
Gate-Source Voltage (V_GS) max ±20 V
Gate Threshold Voltage (V_GS(th)) 3.5 V typ
Gate Charge (Q_G) 39 nC at 10 V
Input Capacitance (C_iss) 710 pF at 100 V
Power Dissipation (P_D) at T_C 83 W
Operating Temperature Range -55 °C to +150 °C -55 °C to +175 °C (junction)
Package PG-TO252-3 (DPAK), surface mount PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
FET Type N-Channel
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at Tc=25°C 50 A
Pulsed Drain Current (IDM) 180 A
Maximum R_DS(on) at VGS=10V 15 mΩ
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value]
Total Power Dissipation (Ptot) at Tc=25°C 100 W
Pin Count 3 (2 + Tab)
Automotive Qualification AEC-Q101 qualified
Delivery Form Tape and Reel (T&R)

Datasheets & Resources

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