IPD65R380E6ATMA1 vs IPD50R399CPATMA1 Comparison
Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD50R399CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPD65R380E6ATMA1 | IPD50R399CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOSβ’ E6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (CoolMOSβ’) | CoolMOS CP (superjunction) |
| Drain-Source Voltage (V_DS) | 650 V | 500 V |
| Continuous Drain Current (I_D) at T_C | 10.6 A | β |
| R_DS(on) max at V_GS=10V | 380 mΞ© | β |
| R_DS(on) test conditions | 3.2 A, 10 V | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | β |
| Gate Charge (Q_G) | 39 nC at 10 V | β |
| Input Capacitance (C_iss) | 710 pF at 100 V | β |
| Power Dissipation (P_D) at T_C | 83 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| Package | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Product Family | β | CoolMOS CP |
| Channel Type | β | N-Channel |
| Continuous Drain Current (I_D, Tc) | β | 9 A |
| Power Dissipation (P_D, Tc) | β | 83 W |
| On-Resistance (R_DS(on), typ) | β | 0.399 ohm |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Lead Free / RoHS | β | ROHS3 Compliant |
| Configuration | β | Single |
| Operating Mode | β | Enhancement-mode |
| Datasheet Series | β | IPD50R399CP |