IPD65R380E6ATMA1 vs IPD60R180P7ATMA1 Comparison
Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD60R180P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPD65R380E6ATMA1 | IPD60R180P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOSβ’ E6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (CoolMOSβ’) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | β |
| Continuous Drain Current (I_D) at T_C | 10.6 A | β |
| R_DS(on) max at V_GS=10V | 380 mΞ© | β |
| R_DS(on) test conditions | 3.2 A, 10 V | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | β |
| Gate Charge (Q_G) | 39 nC at 10 V | β |
| Input Capacitance (C_iss) | 710 pF at 100 V | β |
| Power Dissipation (P_D) at T_C | 83 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| Package | PG-TO252-3 (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited) |
| Product Family | β | CoolMOS P7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) at TC=25C | β | 18 A |
| On-Resistance RDS(on) max at VGS=10V | β | 180 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Power Dissipation (PD) at TC=25C | β | 72 W |
| Operating Junction Temperature | β | -55C to +150C |
| Lead-Free | β | Yes |
| Shipping Package | β | Tape and Reel (ATMA1 suffix) |