IPD65R380E6ATMA1 vs IPD60R360P7ATMA1 Comparison
Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD60R360P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R360P7ATMA1 - 600V CoolMOS P7 MOSFET, 360mOhm, 9A | Infineon
IPD60R360P7ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPD65R380E6ATMA1 | IPD60R360P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | 600 V |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Operating Temperature Range | -55 °C to +150 °C | — |
| Package | PG-TO252-3 (DPAK), surface mount | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| MSL Level | 1 | 1 (per JEDEC J-STD20) |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Continuous Drain Current (I_D) at T_C=25°C | — | 9 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max @ V_GS=10V | — | 360 mΩ |
| Total Power Dissipation (P_tot) at T_C=25°C | — | 41 W |
| Operating Junction Temperature | — | -55°C to +150°C |
| Storage Temperature | — | -55°C to +150°C |
| Package / Case | — | PG-TO252-3 (DPAK), surface mount |
| Gate Threshold Voltage (V_GS(th)) typ | — | 3.5 V (typ) |
| ESD Protection (HBM) | — | >2 kV (per datasheet) |
| RoHS Compliance | — | Compliant |
| Qualification | — | Industrial grade per JEDEC (J-STD20, JESD22) |