IPD65R380E6ATMA1 vs IPD60R360P7SAUMA1 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD60R360P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD65R380E6ATMA1 IPD60R360P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOSβ„’ E6 CoolMOS P7
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOSβ„’) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS) 650 V β€”
Continuous Drain Current (I_D) at T_C 10.6 A β€”
R_DS(on) max at V_GS=10V 380 mΞ© β€”
R_DS(on) test conditions 3.2 A, 10 V β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Gate Threshold Voltage (V_GS(th)) 3.5 V typ β€”
Gate Charge (Q_G) 39 nC at 10 V β€”
Input Capacitance (C_iss) 710 pF at 100 V β€”
Power Dissipation (P_D) at T_C 83 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C -55C to +150C (junction)
Package PG-TO252-3 (DPAK), surface mount β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID) at TC β€” 9 A
Static Drain-Source On-Resistance (RDS(on)) β€” 360 mOhm (typ, VGS = 10 V)
Power Dissipation (PD) at TC β€” 41 W
Gate-Source Threshold Voltage (VGS(th)) β€” 3.0 V to 4.5 V (typ)
Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Package / Case β€” PG-TO252-3 (DPAK)
Number of Pins β€” 3
Channel Type β€” N-Channel

Datasheets & Resources

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