IPD70N10S312ATMA1 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S312ATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S312ATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | β |
| Product Family | OptiMOS-T Power-Transistor | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | β |
| Pulsed Drain Current (IDM) | 180 A | 180 A |
| Power Dissipation (PD, Tc) | 125 W | β |
| On-State Resistance (RDS(on)) | 11.1 mΞ© @ 70 A, 10 V VGS | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | β |
| Total Gate Charge (Qg) | 65 nC @ 10 V | β |
| Operating Temperature (TJ) | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 Β°C peak reflow) | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100 % (per datasheet) | β |
| RoHS Compliance | Green product, RoHS compliant | β |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |