IPD70N10S312ATMA1 vs IPD35N10S3L26ATMA2 Comparison
Detailed side-by-side comparison of IPD70N10S312ATMA1 by Infineon and IPD35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA2 β ActiveSpecification Comparison
| Parameter | IPD70N10S312ATMA1 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | β |
| Product Family | OptiMOS-T Power-Transistor | OptiMOS-T |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 35 A |
| Pulsed Drain Current (IDM) | 180 A | β |
| Power Dissipation (PD, Tc) | 125 W | β |
| On-State Resistance (RDS(on)) | 11.1 mΞ© @ 70 A, 10 V VGS | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | β |
| Total Gate Charge (Qg) | 65 nC @ 10 V | β |
| Operating Temperature (TJ) | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 Β°C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % (per datasheet) | β |
| RoHS Compliance | Green product, RoHS compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| On-Resistance R<sub>DS(on)</sub> max | β | 24 mOhm |
| Power Dissipation (Ptot, Tc) | β | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | β | [DATA_NEEDED: gate threshold typical/range] |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max] |
| Pin Count | β | 3 (Drain, Source, Gate + tab) |
| Technology | β | Trench MOSFET (OptiMOS-T) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |