IPD70N10S312ATMA1 vs IPD60R280P7SAUMA1 Comparison

Detailed side-by-side comparison of IPD70N10S312ATMA1 by Infineon and IPD60R280P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 βœ“ Active
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD70N10S312ATMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IPD70N10S312ATMA1 β€”
Product Family OptiMOS-T Power-Transistor β€”
FET Type N-Channel, Enhancement Mode β€”
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID, Tc) 70 A 12 A
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) 125 W β€”
On-State Resistance (RDS(on)) 11.1 mΞ© @ 70 A, 10 V VGS β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] 4 V max @ ID = 190 Β΅A
Input Capacitance (Ciss) 4355 pF @ 25 V β€”
Total Gate Charge (Qg) 65 nC @ 10 V β€”
Operating Temperature (TJ) -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (up to 260 Β°C peak reflow) 1
Automotive Qualification AEC-Q101 β€”
Avalanche Tested 100 % (per datasheet) β€”
RoHS Compliance Green product, RoHS compliant β€”
Static Drain-Source On-Resistance (RDS(on)) β€” 280 mΞ© (typical)
Gate-Source Voltage (VGS) Max β€” Β±20 V
Total Power Dissipation (Ptot, Tc) β€” 53 W
Operating Junction Temperature (TJ) β€” -40 Β°C to +150 Β°C
Technology β€” CoolMOS P7 Superjunction (SJ) N-channel
Series β€” CoolMOS P7 (7th generation, 600 V)
RoHS Status β€” Compliant
Integrated ESD Protection β€” Yes

Datasheets & Resources

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