IPD70N10S312ATMA2 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD70N10S312ATMA2 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 β€”
Technology OptiMOS-T Power-MOSFET (N-Channel) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 70 A β€”
Power Dissipation (Ptot, Tc=25C) 125 W β€”
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 2.0 V to 3.5 V
Operating Temperature Range -55C to +175C -55C to +150C
Package PG-TO252-3-11 (DPAK) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Channel Type N-Channel Enhancement Mode β€”
RoHS Status Compliant β€”
MSL Level 1 (unlimited floor life) 1 (unlimited)
Avalanche Rated Yes β€”
Product Family β€” OptiMOS 3
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 69 W
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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