IPD70N10S312ATMA2 vs IPB020N10N5LFATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and IPB020N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 β ActiveInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΞ© OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S312ATMA2 | IPB020N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $2.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | β |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 70 A | β |
| Power Dissipation (Ptot, Tc=25C) | 125 W | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C |
| Package | PG-TO252-3-11 (DPAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Channel Type | N-Channel Enhancement Mode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life) | 1 |
| Avalanche Rated | Yes | β |
| Product Family | β | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (Tc) | β | 176 A |
| Silicon-Limited Drain Current | β | 289 A |
| Package-Limited Drain Current | β | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | β | 10.2 A |
| On-State Resistance RDS(on) max | β | 2.0 mΞ© |
| Total Power Dissipation (Tc) | β | 313 W |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Marking Code | β | 020N10LF |