IPD70N10S312ATMA2 vs IPD30N10S3L34ATMA2 Comparison

Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and IPD30N10S3L34ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 βœ“ Active

Specification Comparison

Parameter IPD70N10S312ATMA2 IPD30N10S3L34ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $0.92
Manufacturer Infineon Technologies β€”
Part Number IPD70N10S312ATMA2 β€”
Technology OptiMOS-T Power-MOSFET (N-Channel) OptiMOS-T (trench)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc) 70 A β€”
Power Dissipation (Ptot, Tc=25C) 125 W β€”
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Operating Temperature Range -55C to +175C β€”
Package PG-TO252-3-11 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Channel Type N-Channel Enhancement Mode β€”
RoHS Status Compliant Compliant
MSL Level 1 (unlimited floor life) [DATA_NEEDED: MSL level]
Avalanche Rated Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 100 V
Continuous Drain Current (I_D, Tc) β€” 30 A
Pulsed Drain Current (I_DM) β€” 180 A
Power Dissipation (P_D, Tc) β€” 57 W
R_DS(on) max at V_GS=10V β€” 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max β€” 2.4 V
Total Gate Charge (Qg) max β€” 31 nC
Operating Junction Temperature β€” -55 C to +175 C
Package / Supplier Device Package β€” PG-TO252-3-11 (DPAK)
Pin / Tab Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101

Datasheets & Resources

Browse All Products Create BOM Request Quote