IPD70N10S312ATMA2 vs IPD33CN10NGATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 β ActiveInfineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S312ATMA2 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.32 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPD70N10S312ATMA2 | β |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 27 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Operating Temperature Range | -55C to +175C | -55C to +175C (TJ) |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Channel Type | N-Channel Enhancement Mode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life) | 1 |
| Avalanche Rated | Yes | β |
| FET Type | β | N-Channel |
| Power Dissipation (PD, Tc) | β | 58 W |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| Lead-Free | β | Yes |